IIB  IIIA  IVA  VA  VIA 

Al  Si  P  S  

Ti_{2}AlC
 Room Temperature Resistivity: 0.36μΩ Electron Mobility (300K): 0.0090m/Vs  Hole Mobility (300K): 0.0082m/Vs  Conducting Electron Density: 1.0x10^{27}/m^{3}  Hole Density: 1.0x10^{27}/m^{3}  Density of States at E_{f}: 4.9/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: V_{2}AlC
 Room Temperature Resistivity: 0.26μΩ Electron Mobility (300K): 0.0046m/Vs  Hole Mobility (300K): 0.0039m/Vs  Conducting Electron Density: 2.7x10^{27}/m^{3}  Hole Density: 2.7x10^{27}/m^{3}  Density of States at E_{f}: 7.5/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Cr_{2}AlC
 Room Temperature Resistivity: 0.74μΩ Electron Mobility (300K): 0.0034m/Vs  Hole Mobility (300K): 0.0036m/Vs  Conducting Electron Density: 1.2x10^{27}/m^{3}  Hole Density: 1.2x10^{27}/m^{3}  Density of States at E_{f}: 14.5/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Nb_{2}AlC
 Room Temperature Resistivity: 0.39μΩ Electron Mobility (300K): 0.0038m/Vs  Hole Mobility (300K): 0.0031m/Vs  Conducting Electron Density: 2.7x10^{27}/m^{3}  Hole Density: 2.7x10^{27}/m^{3}  Density of States at E_{f}: 5.1/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ta_{2}AlC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ti_{2}AlN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ti_{3}AlC_{2}
 Room Temperature Resistivity: 0.39μΩ Electron Mobility (300K): 0.00460.0042m/Vs  Hole Mobility (300K): 0.00540.0030m/Vs  Conducting Electron Density: 1.51.6x10^{27}/m^{3}  Hole Density: 1.52x10^{27}/m^{3}  Density of States at E_{f}: 3.8/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ti_{4}AlN_{3}
 Room Temperature Resistivity: 2.61μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): 0.00034m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: 7.0x10^{27}/m^{3}  Density of States at E_{f}: 6.9/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ta_{4}AlC_{3}
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
Ti_{3}SiC_{2}
 Room Temperature Resistivity: 0.22μΩ Electron Mobility (300K): 0.005m/Vs  Hole Mobility (300K): 0.006m/Vs  Conducting Electron Density: 2.5x10^{27}/m^{3}  Hole Density: 2.5x10^{27}/m^{3}  Density of States at E_{f}: 5/eV•unit cell  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
V_{2}PC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Nb_{2}PC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
Ti_{2}SC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}SC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower:: Nb_{2}SC_{0.4}
 Room Temperature Resistivity:  Room Temperature Resistivity: μΩ  Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Hf_{2}SC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
Zn  Ga  Ge  As  Se 
Ti_{2}GaC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: V_{2}GaC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Cr_{2}GaC
 Room Temperature Resistivity Effect of Temperature on Resistivity  Hall Coefficient  Magneto Resistance  Thermopower Nb_{2}GaC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Mo_{2}GaC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower:r Ta_{2}GaC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower:r Ti_{2}GaN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Cr_{2}GaN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: V_{2}GaN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower:r 
Ti_{2}GeC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower:r V_{2}GeC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Cr_{2}GeC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ti_{3}GeC_{2}
 Room Temperature Resistivity: 0.26μΩ Electron Mobility (300K): 0.009m/Vs  Hole Mobility (300K): 0.008m/Vs  Conducting Electron Density: 1.5x10^{27}/m^{3}  Hole Density: 1.5x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
V_{2}AsC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Nb_{2}AsC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
 
Cd  In  Sn  Sb  Te 
Ti_{2}CdC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
Sc_{2}InC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ti_{2}InC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}InC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Nb_{2}InC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Hf_{2}InC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Ti_{2}InN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}InN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower:r 
Ti_{2}SnC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}SnC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Nb_{2}SnC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Hf_{2}SnC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Hf_{2}SnN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 


Tl  Pb  Bi  Po  

Ti_{2}TlC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}TlC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Hf_{2}TlC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}TlN
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 
Ti_{2}PbC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Zr_{2}PbC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: Hf_{2}PbC
 Room Temperature Resistivity: μΩ Electron Mobility (300K): m/Vs  Hole Mobility (300K): m/Vs  Conducting Electron Density: x10^{27}/m^{3}  Hole Density: x10^{27}/m^{3}  Density of States at E_{f}:  Effect of Temperature on Resistivity  Hall Coefficient:  Magneto Resistance:  Thermopower: 

