Linkoping University & Uppsala University

Sorted by Reverse Chronological Order

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41. The Mn + 1AXn phases: Materials science and thin-film processing, Eklund, P., Beckers, M., Jansson, U., Högberg, H. & Hultman, L. Thin Solid Films 518, 1851-1878 (2010). pdf

40. Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC, Frodelius, J., Eklund, P., Beckers, M., Persson, P., Högberg, H., Hultman, L. Thin Solid Films 518, 1621-1626 (2010). pdf

39. Phase stability of Ti2AlC upon oxygen incorporation: A first-principles investigation, Dahlqvist, M., Alling, B., Abrikosov, I.A. & Rosén, J. Phys. Rev. B 81, (2010). pdf

38. Formation of the MAX -phase oxycarbide Ti2 AlC1-x Ox studied via electron energy-loss spectroscopy and first-principles calculations, Persson, P.O., Roson, J., McKenzie, D.R. & Bilek, M.M.M. Phys. Rev. B 80 092102 (2009). pdf

37. The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti–Al–N thin films, Beckers, M., Höglund, C., Baehtz, C., Martins, R.M.S., Persson, P.O.A., Hultman, L. & Möller, W. J. Appl. Phys. 106, 064915 (2009). pdf

36. On the Stability of Mg Nanograins to Coarsening after Repeated Melting, Amini, S., Córdoba Gallego, J.M., Daemen, L., McGhie, A.R., Ni, C., Hultman, L., Odén, M. & Barsoum, M.W. Nano Letters 9, 3082-3086 (2009). pdf

35. Oxygen incorporation in Ti2AlC thin films Rosen, J., Persson, P. O. Å., Ionescu, M., Kondyurin, A., McKenzie, D. R. &amp Bilek, M. M. M., Appl. Phys. Lett., 92 064102 (2008). pdf

34. Ti2AlC coatings deposited by High Velocity Oxy-Fuel spraying, Frodelius, J., Sonestedt, M., Björklund, S., Palmquist, J., Stiller, K., Högberg, H. & Hultman, L. Surface and Coatings Technology 202, 5976-5981 (2008). pdf

33. Anisotropy in the electronic structure of V2 GeC investigated by soft x-ray emission spectroscopy and first-principles theory, Magnuson, M., Wilhelmsson, O., Mattesini, M., Li, S., Ahuja, R., Eriksson, O., Högberg, H., Hultman, L. & Jansson, U. Phys. Rev. B 78 035117 (2008). pdf

32. Dielectric properties of Ti2AlC and Ti2AlN MAX phases: The conductivity anisotropy, Haddad, N., Garcia-Caurel, E., Hultman, L., Barsoum, M.W. & Hug, G. J. Appl. Phys. 104, 023531-10 (2008). pdf

31. Structural, electrical and mechanical characterization of magnetron-sputtered V-Ge-C thin films, Wilhelmsson, O., Eklund, P., Högberg, H., Hultman, L. & Jansson, U. Acta Materialia 56 2563-2569 (2008). pdf

30. Weak electronic anisotropy in the layered nanolaminate Ti2GeC, Scabarozi, T., Eklund, P., Emmerlich, J., Högberg, H., Meehan, T., Finkel, P., Barsoum, M., Hettinger, J., Hultman, L. & Lofland, S. Solid State Communications 146, 498-501 (2008). pdf

29. Micro and macroscale tribological behavior of epitaxial Ti3SiC2 thin films, Emmerlich, J., Gassner, G., Eklund, P., Högberg, H. & Hultman, L. Wear 264, 914-919 (2008). pdf

28. A solid phase reaction between TiC[sub x] thin films and Al2O3 substrates, Persson, P.O.A., Rosen, J., McKenzie, D.R., Bilek, M.M.M. & Hoglund, C. J. Appl. Phys. 103 066102-3 (2008). pdf

27. Bonding mechanism in the nitrides Ti2 AlN and TiN: An experimental and theoretical investigation, Magnuson, M., Mattesini, M., Li, S., Hoglund, C., Beckers, M., Hultman, L. & Eriksson, O. Phys. Rev. B 76 195127 (2007). pdf

26. Nucleation and growth of Ti2AlN thin films deposited by reactive magnetron sputtering onto MgO(111), Beckers, M., Schell, N., Martins, R.M.S., Mucklich, A., Moller, W. & Hultman, L. J. Appl. Phys. 102, 074916-8 (2007). pdf

25. Epitaxial Ti2AlN(0 0 0 1) thin film deposition by dual-target reactive magnetron sputtering, Persson, P., Kodambaka, S., Petrov, I. & Hultman, L. Acta Materialia 55 4401-4407 (2007). pdf

24. Ta4AlC3: Phase determination, polymorphism and deformation, Eklund, P., Palmquist, J., Höwing, J., Trinh, D., El-Raghy, T., Högberg, H. & Hultman, L. Acta Materialia 55, 4723-4729 (2007). pdf

23. Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates, Eklund, P., Murugaiah, A., Emmerlich, J., Czigàny, Z., Frodelius, J., Barsoum, M., Högberg, H. & Hultman, L. Journal of Crystal Growth 304, 264-269 (2007). pdf

22. Deposition of epitaxial Ti2AlC thin films by pulsed cathodic arc Rosén, J., Ryves, L., Persson, P. O. Å., &amp Bilek, M. M. M., J. App. Phys. 101 056101 (2007). pdf

21. Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films, Hoglund, C., Beckers, M., Schell, N., v. Borany, J., Birch, J. & Hultman, L. Appl. Phys. Lett. 90, 174106-3 (2007). pdf

20. Electrical resistivity of Tin+1ACn (A = Si, Ge, Sn, n = 1–3) thin films, Emmerlich, J., Eklund, P., Rittrich, D., Högberg, H. & Hultman, L. Journal of Materials Research 22, 2279-2287 (2007). pdf

19. Intrusion-type deformation in epitaxial Ti3SiC2/TiC0.67 nanolaminates, Wilhelmsson, O., Eklund, P., Giuliani, F., Högberg, H., Hultman, L., and Jansson, U. Appl. Phys. Lett. 91 123124 (2007). pdf

18. Growth and Property Characterization of Epitaxial Thin Films from the Tin+1(Si, Ge, Sn)Cn Systems Högberg, H., Emmerlich, J., Eklunch, P., Wilhelmsson, O., Palmquist, J-P., Jansson, U., and Hultman, L., Advances in Science and Technology 45 2648 (2006). pdf

17. Phase stability of epitaxially grown Ti2AlN thin films Beckers, M., Schell, N., Martins, R.M.S., Mucklich, A., and Moller, W. Appl. Phys. Lett. 89, 074101 (2006). pdf

16. High-power impulse magnetron sputtering of Ti3SiC2 thin films from a compound target, Alami, J., Eklund, P., Emmerlich, J., Wilhelmsson, O., Jansson, U., Högberg, H., Hultman, L. & Helmersson, U.Thin Solid Films 515 1731-1736 (2006). pdf

15. Electronic structure and chemical bonding in Ti2 AlC investigated by soft x-ray emission spectroscopy, Magnuson, M., Wilhelmsson, O., Palmquist, J., Jansson, U., Mattesini, M., Li, S., Ahuja, R. & Eriksson, O. Phys. Rev. B 74 195108 (2006). pdf

14. Electronic structure and chemical bonding in Ti4SiC3 investigated by soft x-ray emission spectroscopy and first-principles theory, Magnuson, M., Mattesini, M., Wilhelmsson, O., Emmerlich, J., Palmquist, J., Li, S., Ahuja, R., Hultman, L., Eriksson, O. & Jansson, U. Phys. Rev. B 74, 205102 (2006). pdf

13. Annealing studies of nanocomposite Ti-Si-C thin films with respect to phase stability and tribological performance, Rester, M., Neidhardt, J., Eklund, P., Emmerlich, J., Ljungcrantz, H., Hultman, L. & Mitterer, C. Materials Science and Engineering: A 429 90-95 (2006). pdf

12. Photoemission studies of Ti3 Si C2 and nanocrystalline-TiC/amorphous-SiC nanocomposite thin films, Eklund, P., Virojanadara, C., Emmerlich, J., Johansson, L.I., Högberg, H. & Hultman, L. Phys. Rev. B 74, 045417 (2006). pdf

11. Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering, Wilhelmsson, O., Palmquist, J., Lewin, E., Emmerlich, J., Eklund, P., Persson, P., Högberg, H., Li, S., Ahuja, R., Eriksson, O., Hultman, L. & Jansson, U. Journal of Crystal Growth 291 290-300 (2006). pdf

10. Electronic structure investigation of Ti3AlC2 , Ti3SiC2 , and Ti3GeC2 by soft x-ray emission spectroscopy, Magnuson, M., Palmquist, J., Mattesini, M., Li, S., Ahuja, R., Eriksson, O., Emmerlich, J., Wilhelmsson, O., Eklund, P., Högberg, H., Hultman, L. & Jansson, U. Phys. Rev. B 72, 245101 (2005). pdf

9. Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films, Eklund, P., Emmerlich, J., Hogberg, H., Wilhelmsson, O., Isberg, P., Birch, J., Persson, P.O.A., Jansson, U. & Hultman, L. J. Vac. Sci. Technol. B 23, 2486-2495 (2005). pdf

8. Growth and characterization of MAX-phase thin films, Högberg, H., Hultman, L., Emmerlich, J., Joelsson, T., Eklund, P., Molina-Aldareguia, J., Palmquist, J., Wilhelmsson, O. & Jansson, U. Surface and Coatings Technology 193 6-10 (2005). pdf

7. Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering, Högberg, H., Eklund, P., Emmerlich, J., Birch, J. & Hultman, L. J Mater Res 20, 779-782 (2005). pdf

6. Growth of Ti3SiC2 thin films by elemental target magnetron sputtering, Emmerlich, J., Hogberg, H., Sasvari, S., Persson, P.O.A., Hultman, L., Palmquist, J., Jansson, U., Molina-Aldareguia, J.M. & Czigany, Z. J. Appl. Phys. 96, 4817-4826 (2004). pdf

5. Comment on “Pulsed Laser Deposition and Properties of Mn+1AXx Phase Formulated Ti3SiC2 Thin Films”, Eklund, P., Palmquist, J., Wilhelmsson, O., Jansson, U., Emmerlich, J., Högberg, H. & Hultman, L. Tribology Letters 17, 977-978 (2004). pdf

4. Mn+1 A Xn phases in the Ti-Si-C system studied by thin-film synthesis and ab initio calculations, Palmquist, J., Li, S., Persson, P.O., Emmerlich, J., Wilhelmsson, O., Högberg, H., Katsnelson, M.I., Johansson, B., Ahuja, R., Eriksson, O., Hultman, L. & Jansson, U. Phys. Rev. B 70 165401 (2004). pdf

3. Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering, Wilhelmsson, O., Palmquist, J., Nyberg, T. & Jansson, U. Appl. Phys. Lett. 85 1066 (2004). pdf

2. Kink formation around indents in laminated Ti3SiC2 thin films studied in the nanoscale, Molina-Aldareguia, J.M., Emmerlich, J., Palmquist, J., Jansson, U. & Hultman, L. Scripta Materialia 49, 155-160 (2003). pdf

1. Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films, Palmquist, J., Jansson, U., Seppanen, T., Persson, P.O.A., Birch, J., Hultman, L. & Isberg, P. Appl. Phys. Lett. 81 835-837 (2002). pdf



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